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Part K6T1008C2EDB7000 with NSN 5962-01-408-2869 by Samsung Semiconductor - Submit a Quote

Mfg Part Number: K6T1008C2EDB7000

Item Name: Microcircuit Memory
Manufacturer: Samsung Semiconductor

CAGE Code: 0DUN9

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Each of our NSN 5962014082869 parts like K6T1008C2EDB7000  by  Samsung Semiconductor is readily available with short lead times and competitive prices. Aerospace Store boasts a broad selection of in-demand parts from manufacturers such as Samsung Semiconductor and others. To get in touch with a dedicated account manager, simply submit an RFQ. To do this, enter the part number you want, the quantity needed, and when you need the parts by.

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NSN Information for Part Number K6T1008C2EDB7000 with NSN 5962-01-408-2869, 5962014082869

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-408-2869

Item Description:

Microcircuit Memory

59620140828690NB
CIICHCCESDPMICCriticalityENAC
7 A0
Part NumberiscrnvcrnccHCCMSDSSADC
K6t1008c2edb7000525

Characteristics Data of NSN 5962-01-408-2869, 5962014082869

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE+0.0/+70.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-55.0/+125.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONREMOTE TERMINAL UNIT
CBBLFEATURES PROVIDED3-STATE OUTPUT
CQSJINCLOSURE MATERIALPLASTIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQZPINPUT CIRCUIT PATTERN8 INPUT
CSWJWORD QUANTITY (NON-CORE)131072
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYCMOS STATIC RAM
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
CZERMEMORY DEVICE TYPERAM
FEATSPECIAL FEATURES128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY
TTQYTERMINAL TYPE AND QUANTITY32 FLAT LEADS

  Corresponding National Stock Number to K6T1008C2EDB7000

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