ASAP Semiconductor

Part 100-DL221 with NSN by Other - Submit a Quote

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Specifications

Part Number100-DL221
DescriptionMicrocircuit Memory
ManufacturerOther
NSN5962-01-304-1983(5962013041983)
Item NameMicrocircuit Memory
CAGE Code56053
NIIN01-304-1983(013041983)
FSG Code59 Electrical and Electronic Equipment Components
NCB Code01
CountryUSA

Description

Microcircuit Memory

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Part Information

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NSN Information for Part Number 100-DL221 with NSN 5962-01-304-1983, 5962013041983

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962013041983

Item Description:

Microcircuit Memory

59620130419830NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
100-Dl221515

Characteristics Data of NSN 5962-01-304-1983, 5962013041983

MRCCriteriaCharacteristic
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
ADAUBODY HEIGHT0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
CQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
ADAQBODY LENGTH1.490 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQZPINPUT CIRCUIT PATTERN17 INPUT
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT